Avalanche Energy Rating (Eas) 228 mJ
Pulsed Drain Current-Max (IDM) 234A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0048Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 117A
Turn-Off Delay Time 28 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 49.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13.2A Ta 117A Tc
Input Capacitance (Ciss) (Max) @ Vds 3233pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 3m Ω @ 30A, 10V
Transistor Application SWITCHING
Turn On Delay Time 17.6 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 930mW Ta 73.5W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ