Avalanche Energy Rating (Eas) 360 mJ
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0033Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 155A
Turn-Off Delay Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 71.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta 155A Tc
Input Capacitance (Ciss) (Max) @ Vds 4970pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 2.1m Ω @ 30A, 10V
Transistor Application SWITCHING
Turn On Delay Time 21.1 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 900mW Ta 86.2W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ