Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 100A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 20.3A
Turn-Off Delay Time 34.2 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 11.5V
Current - Continuous Drain (Id) @ 25°C 12.7A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 3.4m Ω @ 30A, 10V
Transistor Application SWITCHING
Turn On Delay Time 10.7 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 890mW Ta 55.5W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ