Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0044Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 115A
Turn-Off Delay Time 28.9 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 11.5V
Current - Continuous Drain (Id) @ 25°C 13.7A Ta 115A Tc
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 2.9m Ω @ 30A, 10V
Transistor Application SWITCHING
Turn On Delay Time 20.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 890mW Ta 62.5W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ