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NTMFS4841NT3G

ON Semiconductor
RoHS
/
Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 8.3A SO-8FL
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Inventory: 6817
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Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 6 days ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 870mW Ta 41.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1436pF @ 12V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta 57A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 66.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 15.5 ns
Continuous Drain Current (ID) 13.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.3A
Drain to Source Breakdown Voltage 30V

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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