Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 8.3A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 13.1A
Turn-Off Delay Time 15.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta 57A Tc
Input Capacitance (Ciss) (Max) @ Vds 1436pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Transistor Application SWITCHING
Turn On Delay Time 13.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 870mW Ta 41.7W Tc
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ