Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1588pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 64A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.5A
Drain-source On Resistance-Max 0.0095Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 132A
Avalanche Energy Rating (Eas) 180.5 mJ
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 870mW Ta 41.7W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ