Avalanche Energy Rating (Eas) 109 mJ
Pulsed Drain Current-Max (IDM) 192A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0103Ohm
Drain Current-Max (Abs) (ID) 15A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 64A
Turn-Off Delay Time 23.2 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Gate Charge (Qg) (Max) @ Vgs 43.5nC @ 11.5V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 64A Tc
Input Capacitance (Ciss) (Max) @ Vds 2354pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 5.5m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 870mW Ta 42.4W Tc
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ