NTMFS4827NET1G
RoHS
/
Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 58.5A SO-8FL
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0108Ohm
Drain Current-Max (Abs) (ID) 8.8A
Continuous Drain Current (ID) 58.5A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 58.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 6.95m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 870mW Ta 38.5W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-F5
Pin Count 8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e3
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case 8-PowerTDFN, 5 Leads
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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