NTMFS4826NET1G
RoHS
/
Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFETFL 30V 66A 5.9mOHM
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0087Ohm
Drain Current-Max (Abs) (ID) 9.5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 66A
Fall Time (Typ) 5.2 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Rise Time 39.8ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 66A Tc
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 5.9m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 2.16W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 870mW Ta 41.7W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-F5
Pin Count 8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e3
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case 8-PowerTDFN, 5 Leads
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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