NTMFS4821NT1G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.8A SO-8FL
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Buying Options
Total Price: USD $0.63
Unit Price: USD $0.6336
≥1 USD $0.6336
≥10 USD $0.5456
≥100 USD $0.37796
≥500 USD $0.315814
Inventory: 680
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 10.8MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 870mW Ta 38.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38.5W
Case Connection DRAIN
Turn On Delay Time 13.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.95m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 12V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 58.5A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Rise Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.8 ns
Turn-Off Delay Time 16.6 ns
Continuous Drain Current (ID) 58.5A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Dimensions
Height 1.1mm
Length 5.1mm
Width 6.1mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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