FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage -30V
Drain-source On Resistance-Max 0.095Ohm
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.3A
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 95m Ω @ 3A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.2 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 770mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ