Pulsed Drain Current-Max (IDM) 23A
Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 3.5A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -5.8A
Turn-Off Delay Time 60 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 1329pF @ 16V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 40m Ω @ 3A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 6.9 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 700mW Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ