Drain to Source Breakdown Voltage -8V
Gate to Source Voltage (Vgs) 6V
Continuous Drain Current (ID) 3.7A
Turn-Off Delay Time 80 ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Drain to Source Voltage (Vdss) 8V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 4V
Vgs(th) (Max) @ Id 720mV @ 250μA
Rds On (Max) @ Id, Vgs 36m Ω @ 6.2A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 700mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ