Drain to Source Breakdown Voltage -12V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.7A
Turn-Off Delay Time 3.5 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 12V
Vgs(th) (Max) @ Id 400mV @ 100μA
Rds On (Max) @ Id, Vgs 60m Ω @ 3.3A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 625mW Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ