FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4.4A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.2A Tj
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 3.2A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 5.8 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ