NTH4L040N65S3F
RoHS
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Package TO-247-4
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
FET 650V 65A TO247AD
PDF
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Buying Options
Total Price: USD $10.43
Unit Price: USD $10.428
≥1 USD $10.428
≥10 USD $8.73899
Inventory: 1151
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1009 mJ
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 162.5A
Drain-source On Resistance-Max 0.04Ohm
Drain Current-Max (Abs) (ID) 65A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 158nC @ 10V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Input Capacitance (Ciss) (Max) @ Vds 5940pF @ 400V
Vgs(th) (Max) @ Id 5V @ 2.1mA
Rds On (Max) @ Id, Vgs 40m Ω @ 32.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 446W Tc
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-PSFM-T4
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series FRFET?, SuperFET? III
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-247-4
Mounting Type Through Hole
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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