Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.2A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 565pF @ 5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 65m Ω @ 4.4A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 500mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn80Pb20)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ