Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 2.35A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 1.65A Ta
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 3.3A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500mW Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ