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NTF3055-100T1

ON Semiconductor
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 3A SOT223
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Buying Options
Total Price: USD $1.61
Unit Price: USD $1.6112
≥1 USD $1.6112
≥10 USD $1.3224
≥100 USD $1.2806
≥500 USD $1.23975
≥1000 USD $1.19795
Inventory: 54727
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.11Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 9A
Avalanche Energy Rating (Eas) 74 mJ

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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