Drain-source On Resistance-Max 0.0075Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 69A
Turn-Off Delay Time 26.8 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Rds On (Max) @ Id, Vgs 8.5m Ω @ 30A, 10V
Transistor Application SWITCHING
Turn On Delay Time 11.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 71W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ