NTDV3055L104T4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 12A DPAK-3
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Buying Options
Total Price: USD $4.15
Unit Price: USD $4.1477
≥1 USD $4.1477
≥10 USD $3.40385
≥100 USD $3.29745
≥500 USD $3.19105
≥1000 USD $3.08465
≥3000 USD $2.76545
Inventory: 2334
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 210ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 45A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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