Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Transistor Application SWITCHING
Turn On Delay Time 9.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.5W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ