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NTDV20N06LT4G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
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Buying Options
Total Price: USD $0.44
Unit Price: USD $0.442447
≥1 USD $0.442447
≥200 USD $0.17199
≥500 USD $0.165425
≥1000 USD $0.1628
Inventory: 1234
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.36W Ta 60W Tj
Avalanche Energy Rating (Eas) 128 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 60A
Drain-source On Resistance-Max 0.048Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 25 ns
Fall Time (Typ) 62 ns
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 60V
Rise Time 98 ns
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 48m Ω @ 10A, 5V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 9.6 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

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