NTD80N02G
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 24V 80A DPAK
PDF
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Buying Options
Total Price: USD $14.25
Unit Price: USD $14.25
≥1 USD $14.25
≥10 USD $11.6926
≥100 USD $11.32685
≥500 USD $10.9611
≥1000 USD $10.5963
Inventory: 1213
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 733 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 24V
Drain-source On Resistance-Max 0.0058Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 28 ns
Fall Time (Typ) 40 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 67ns
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 20V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 5.8m Ω @ 80A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 75W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 75W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 80A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 24V
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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