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NTD78N03G

ON Semiconductor
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 11.4A DPAK
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Buying Options
Total Price: USD $44.52
Unit Price: USD $44.5208
≥1 USD $44.5208
≥10 USD $36.53035
≥100 USD $35.38845
≥500 USD $34.2475
≥1000 USD $33.1056
Inventory: 1063
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 78A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.4W Ta 64W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 64W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 78A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 12V
Current - Continuous Drain (Id) @ 25°C 11.4A Ta 78A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 68ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 78A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 210A
Avalanche Energy Rating (Eas) 722.5 mJ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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