Avalanche Energy Rating (Eas) 72 mJ
Pulsed Drain Current-Max (IDM) 44A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 146m Ω @ 6A, 5V
Transistor Application SWITCHING
Turn On Delay Time 10.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.28W Ta 56.6W Tc
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ