Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.3W Ta 50W Tc
Element Configuration Single
Rds On (Max) @ Id, Vgs 8.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 20.3 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V