NTD65N03R-001
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 9.5A IPAK
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 65A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.3W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 20.3 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0146Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 130A
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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