Avalanche Energy Rating (Eas) 240 mJ
Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 0.0078Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16.4A
Turn-Off Delay Time 39 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 101A Tc
Input Capacitance (Ciss) (Max) @ Vds 5025pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Rds On (Max) @ Id, Vgs 4.4m Ω @ 50A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 93.75W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ