NTD4979NT4G
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.4A Ta 41A Tc 41A 2.56W 30V
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Buying Options
Total Price: USD $1.95
Unit Price: USD $1.9494
≥1 USD $1.9494
≥10 USD $1.5998
≥100 USD $1.54945
≥500 USD $1.50005
≥1000 USD $1.4497
Inventory: 1188
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.38W Ta 26.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.56W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 837pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta 41A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 41A
Drain Current-Max (Abs) (ID) 9.4A
Drain-source On Resistance-Max 0.019Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 150A
Avalanche Energy Rating (Eas) 18 mJ
Compliance
RoHS Status RoHS Compliant
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