NTD4965NT4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 68A DPAK
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Buying Options
Total Price: USD $0.43
Unit Price: USD $0.4294
≥1 USD $0.4294
≥10 USD $0.35245
≥100 USD $0.34105
≥500 USD $0.32965
≥1000 USD $0.3192
Inventory: 1179
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.39W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38.5W
Case Connection DRAIN
Turn On Delay Time 12.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 4.5V
Rise Time 34.2 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14.2 ns
Turn-Off Delay Time 18.9 ns
Continuous Drain Current (ID) 17.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 68A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 60 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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