NTD4959NHT4G
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9A Ta 58A Tc 58A 2W 30V
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Buying Options
Total Price: USD $10.9
Unit Price: USD $10.9003
≥1 USD $10.9003
≥10 USD $8.9433
≥100 USD $8.664
≥500 USD $8.3847
≥1000 USD $8.1054
Inventory: 1134
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.3W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 11.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.0125Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 112.5 mJ
Compliance
RoHS Status RoHS Compliant
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