Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.27W Ta 36.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9.2A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 17.8nC @ 10V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 11.3mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.2A
Pulsed Drain Current-Max (IDM) 98A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 60.5 mJ