NTD4860NT4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 25V 13A 3-Pin(2+Tab) DPAK T/R
PDF
/
Buying Options
Total Price: USD $0.15
Unit Price: USD $0.152
≥1 USD $0.152
≥10 USD $0.1254
≥100 USD $0.1216
≥500 USD $0.1178
≥1000 USD $0.11305
≥3000 USD $0.10165
Inventory: 12004
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.28W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1308pF @ 12V
Current - Continuous Drain (Id) @ 25°C 10.4A Ta 65A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V
Rise Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.3 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 12.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 65A
Drain to Source Breakdown Voltage 25V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
NTD4860NT4G+price,NTD4860NT4G+datasheet,NTD4860NT4G+in stock,buy+NTD4860NT4G,finder+NTD4860NT4G,NTD4860NT4G+tutorials,NTD4860NT4G+download