Avalanche Energy Rating (Eas) 84.5 mJ
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 65A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12.6A
Turn-Off Delay Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 10.4A Ta 65A Tc
Input Capacitance (Ciss) (Max) @ Vds 1308pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 7.5m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.28W Ta 50W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ