Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 13.6A
Turn-Off Delay Time 23.8 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 19.2nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11.2A Ta 73A Tc
Input Capacitance (Ciss) (Max) @ Vds 1563pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 6.2m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.3W Ta 54.5W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ