Avalanche Energy Rating (Eas) 60.5 mJ
Pulsed Drain Current-Max (IDM) 87A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.025Ohm
Drain Current-Max (Abs) (ID) 6.9A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Turn-Off Delay Time 11.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 11.5V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Transistor Application SWITCHING
Turn On Delay Time 10.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.26W Ta 32.6W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ