NTD4813NH-1G
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 7.6A IPAK
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 44.4 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 90A
Drain-source On Resistance-Max 0.0259Ohm
Drain Current-Max (Abs) (ID) 40A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 13m Ω @ 30A, 10V
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.27W Ta 35.3W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Alternative Model
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