Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11.3A Ta 79A Tc
Input Capacitance (Ciss) (Max) @ Vds 2142pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 6m Ω @ 30A, 10V
Turn On Delay Time 13.9 ns
Element Configuration Single
Power Dissipation-Max 1.4W Ta 68W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ