Avalanche Energy Rating (Eas) 722 mJ
Pulsed Drain Current-Max (IDM) 28A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.01Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 68A
Turn-Off Delay Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.4A Ta 68A Tc
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 10m Ω @ 20A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.04W Ta 75W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn80Pb20)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ