Avalanche Energy Rating (Eas) 50 mJ
Pulsed Drain Current-Max (IDM) 100A
Drain-source On Resistance-Max 0.0145Ohm
Continuous Drain Current (ID) 30A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 20V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 14.5m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 75W Tj
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ