Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 75A
Drain to Source Breakdown Voltage -30V
Drain-source On Resistance-Max 0.08Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 25A, 5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 75W Tj
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn80Pb20)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ