NTB85N03T4
RoHS
/
Package D2PAK
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 28V 85A D2PAK
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Technical Details
Physical
Mount Surface Mount
Package / Case D2PAK
Technical
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Voltage - Rated DC 28V
Max Power Dissipation 80W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 85A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Transistor Application SWITCHING
Rise Time 22ns
Drain to Source Voltage (Vdss) 28V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 30 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 85A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 15A
Drain to Source Breakdown Voltage 28V
Pulsed Drain Current-Max (IDM) 45A
Input Capacitance 2.15nF
Avalanche Energy Rating (Eas) 61 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 6.1mOhm
Rds On Max 6.8 mΩ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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