Avalanche Energy Rating (Eas) 61 mJ
Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 28V
Drain-source On Resistance-Max 0.0068Ohm
Drain Current-Max (Abs) (ID) 15A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 85A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 24V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 6.8m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 80W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ