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NTB85N03G

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 28V 85A D2PAK
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 61 mJ
Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 28V
Drain-source On Resistance-Max 0.0068Ohm
Drain Current-Max (Abs) (ID) 15A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 85A
Turn-Off Delay Time 32 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 22ns
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 24V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 6.8m Ω @ 40A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 80W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 80W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 85A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 28V
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2005
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

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