NTB6413ANT4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFET D2PAK 100V 40A 30MO
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Buying Options
Total Price: USD $1.87
Unit Price: USD $1.8656
≥1 USD $1.8656
≥10 USD $1.5532
≥100 USD $1.236048
Inventory: 588
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 28MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 136W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 84 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 71 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 200 mJ
Dimensions
Height 4.83mm
Length 10.29mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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