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NTB60N06G

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 60A D2PAK
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 454 mJ
Pulsed Drain Current-Max (IDM) 180A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.014Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 94.5 ns
Fall Time (Typ) 142.5 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 180.7ns
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta 150W Tj
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 60A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 60V
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

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