NTB5605T4G
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 18.5A D2PAK
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Pulsed Drain Current-Max (IDM) 55A
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18.5A
Turn-Off Delay Time 29 ns
Fall Time (Typ) 75 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 60V
Rise Time 122ns
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Current - Continuous Drain (Id) @ 25°C 18.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 140m Ω @ 8.5A, 5V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Power Dissipation 88W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 88W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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