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NTB5405NT4G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET NFET 40V 116A PB
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Buying Options
Total Price: USD $12.39
Unit Price: USD $12.38895
≥1 USD $12.38895
≥10 USD $10.165
≥100 USD $9.8477
≥500 USD $9.52945
≥1000 USD $9.21215
Inventory: 1213
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 9.65mm
Length 10.29mm
Height 4.83mm

Technical

Avalanche Energy Rating (Eas) 800 mJ
Pulsed Drain Current-Max (IDM) 280A
Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 0.0058Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 116A
Turn-Off Delay Time 32 ns
Fall Time (Typ) 42 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Rise Time 153 ns
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Current - Continuous Drain (Id) @ 25°C 116A Tc
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 32V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Rds On (Max) @ Id, Vgs 5.8m Ω @ 40A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8.5 ns
Case Connection DRAIN
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta 150W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 9 Weeks

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