Avalanche Energy Rating (Eas) 800 mJ
Pulsed Drain Current-Max (IDM) 280A
Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 0.0058Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 116A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Current - Continuous Drain (Id) @ 25°C 116A Tc
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 32V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Rds On (Max) @ Id, Vgs 5.8m Ω @ 40A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta 150W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ