NTB5405NG
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 116A D2PAK
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3W Ta 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 32V
Current - Continuous Drain (Id) @ 25°C 116A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Rise Time 153ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 116A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0058Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 800 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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