NTB5404NT4G
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 40V 24A 3-Pin(2+Tab) D2PAK T/R
PDF
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Buying Options
Total Price: USD $0.33
Unit Price: USD $0.3325
≥1 USD $0.3325
≥10 USD $0.27265
≥100 USD $0.2641
≥500 USD $0.25555
≥1000 USD $0.247
Inventory: 53184
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 5.4W Ta 254W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 167W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 32V
Current - Continuous Drain (Id) @ 25°C 167A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 65 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 85 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 136A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0045Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 258A
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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